Method for using semiconductor intelligence line

ABSTRACT

The method for using semiconductor intelligence line of the invention, which is to set the semiconductor intelligence line on the drain source voltage axis of the first semiconductor output characteristic, has a gate voltage setting, which indicates the function of limiting the application limit of the drain source current on the output characteristic.

FIELD OF THE INVENTION

The present invention relates to the technical field of a method forusing a semiconductor intelligence line, which indicates a drain and asource of a first semiconductor to open circuit when a source currentvalue exceeds the semiconductor intelligence line under a setting of agate voltage in an output characteristics table of the firstsemiconductor.

BACKGROUND OF THE INVENTION

Since the invention of bipolar transistors in 1947 until now, asemiconductor intelligence line and its function of the presentinvention are never disclosed in an output characteristics table of asemiconductor data sheet, so that the present invention is a pioneeringinvention.

As shown in FIG. 1, please refer to Taiwan Invention Patent PublicationNo. I692163 “SHORT CIRCUIT PROTECTION DEVICE FOR DC POWER SOURCE”, thepatentee of I692163 is the same with the applicant of the presentinvention. In FIG. 1, the device includes a first semiconductor 10 and asecond semiconductor circuit. The second semiconductor circuit includesa second semiconductor 11, a first resistance 12 and a second resistance13. A source S of the first semiconductor 10 is connected to a negativeterminal of a DC power supply 100 and a source S of the secondsemiconductor 11, a drain D of the first semiconductor 10 is connectedto the negative terminal V− of the circuit, and a gate G of the firstsemiconductor 10 is connected to a drain D of the second semiconductor11. The drain D of the second semiconductor 11 is connected to one endof the second resistance 13, the source S of the second semiconductor 11is connected to the source S of the first semiconductor 10, the gate Gof the second semiconductor 11 is connected to one end of the secondresistance 13, the other end of the first resistance 12 is connected tothe negative terminal V− of the circuit, and the other end of the secondresistance 13 is connected to a positive terminal V+ of the circuit. Thefirst semiconductor 10 is a n-channel metal oxide semiconductor fieldeffect transistor (MOSFET), and the second semiconductor 11 is an-channel metal oxide semiconductor field effect transistor. Thepositive terminal of the DC power supply 100 is connected to thepositive terminal V+ of the circuit, and the negative terminal of the DCpower supply 100 is connected to the source S of the first semiconductor10 and the source S of the second semiconductor 11. The positiveterminal V+ of the circuit is connected to the positive terminal of aload 200, and the negative terminal V− of the circuit is connected tothe negative terminal of the load 200. The specification of the patentdiscloses that the first semiconductor 10 also includes a sixthsemiconductor 15 (which is a n-type transistor) in FIG. 6 and a seventhsemiconductor 16 (which is an insulated gate bipolar transistor (IGBT))in FIG. 7. Here is a special statement that the first semiconductor 10includes a MOSFET, IGBT or a n-type transistor. The patent “SHORTCIRCUIT PROTECTION DEVICE FOR DC POWER SOURCE” has a function forprotecting the load 200 from a short circuit during a power supplyprocess of the DC power supply 100.

SUMMARY OF THE INVENTION

In FIG. 1 and the specification of the prior art, the followingstatements about the establishment and the application of asemiconductor intelligence line related to the first semiconductor 10are not mentioned:

1. The method for using a semiconductor intelligence line of the presentinvention is applied to a n-channel metal oxide semiconductor fieldeffect transistor (N Channel MOSFET) includes various gate-sourcevoltage settings, which indicates the corresponding source current andthe corresponding drain-source voltage. When the load is overloaded orshort-circuited and exceeds the corresponding drain current and thecorresponding drain-source voltage, the drain and the source of thefirst semiconductor are turn into open circuits, so that thesemiconductor intelligence line of the present invention indicates thedrain and the source of the first semiconductor to open circuit.

2. The method for using a semiconductor intelligence line of the presentinvention is applied to an insulated gate bipolar transistor (IGBT)includes various gate-emitter voltage settings, which indicates thecorresponding emitter current and the corresponding collector-emittervoltage. When the load is overloaded or short-circuited and exceeds thecorresponding emitter current and the corresponding collector-emittervoltage, the collector and the emitter of the first semiconductor areturn into open circuits, so that the semiconductor intelligence line ofthe present invention indicates the collector and the emitter of thefirst semiconductor to open circuit.

3. The method for using a semiconductor intelligence line of the presentinvention is applied to an n-type transistor includes various basecurrent settings, which indicates the corresponding collector currentand the corresponding collector-emitter voltage. When the load isoverloaded or short-circuited and exceeds the corresponding emittercurrent and the corresponding collector-emitter voltage, the collectorand the emitter of the first semiconductor are turn into open circuits,so that the semiconductor intelligence line of the present inventionindicates the collector and the emitter of the first semiconductor toopen circuit.

The present invention has the following purposes:

The method for using a semiconductor intelligence line applied to thefirst semiconductor has a setting of a gate-source voltage. When theload is overloaded or short-circuited, the drain and the source of thefirst semiconductor are indicated to open circuit.

The method for using a semiconductor intelligence line applied to thefirst semiconductor has a setting of a gate-emitter voltage. When theload is overloaded or short-circuited, the collector and the emitter ofthe first semiconductor are indicated to open circuit.

The method for using a semiconductor intelligence line applied to thefirst semiconductor has a setting of a base current. When the load isoverloaded or short-circuited, the collector and the emitter of thefirst semiconductor are indicated to open circuit.

The present invention has the following features:

1. The method for using a semiconductor intelligence line applied to ametal oxide semiconductor field effect transistor is the first in theworld. The method has a setting of a gate-source voltage. When the loadis overloaded or short-circuited, the drain and the source of the firstsemiconductor are indicated to open circuit.

2. The method for using a semiconductor intelligence line applied to aninsulated gate bipolar transistor is the first in the world. The methodhas a setting of a gate-emitter voltage. When the load is overloaded orshort-circuited, the collector and the emitter of the firstsemiconductor are indicated to open circuit.

3. The method for using a semiconductor intelligence line applied to ann-type transistor is the first in the world. The method has a setting ofa base current. When the load is overloaded or short-circuited, thecollector and the emitter of the first semiconductor are indicated toopen circuit.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an embodiment of a short circuit protection device for aconventional DC power source.

FIG. 2 is a first embodiment of the method for using a semiconductorintelligence line of the present invention.

FIG. 3 is a second embodiment of the method for using a semiconductorintelligence line of the present invention.

FIG. 4 is a third embodiment of the method for using a semiconductorintelligence line of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

As shown in FIG. 2, which is the first embodiment of the method forusing a semiconductor intelligence line of the present invention. Thefirst semiconductor 10 in FIG. 1 is an example of NVHL060N090SC1(MOSFET-SIC Power, Single N-Channal), and a semiconductor intelligenceline 300 is disposed on an output characteristics table ofNVHL060N090SC1 in FIG. 2.

The semiconductor intelligence line 300 is disposed vertically on adrain-source voltage (VDS) axis, about a position at 3.5V.

The gate-source voltage (VGS) lines crossed by the semiconductorintelligence line 300 are 7V, 9V, 10V, 12V, 13V and 15V respectively,and the corresponding parallel and transverse drain current (ID) valuesare 2 A, 8 A, 12 A, 25 A, 32 A and 45 A. For example, when VGS=15V andID=45 A, its VDS is 3.5V.

When VGS=12V and ID=25 A, its VDS is 3.5V.

When VGS=9V and ID=12 A, its VDS is 3.5V.

From the above, the semiconductor intelligence line 300 can use threedifferent gate-source voltages at the 3.5V position on the drain-sourcevoltage axis, that is, VGS=15V, 12V and 9V can get the correspondingdrain current ID=45 A, 25 A and 12 A.

The corresponding drain current ID=45 A, 25 A and 12 A are the draincurrent values of the application limit. In application, if the draincurrent value exceeds the application limit, the circuit is open by thedrain and the source of the first semiconductor 10, so that the functionof indicating the drain and the source of the first semiconductor 10 toopen circuit is achieved.

From the above, although the semiconductor intelligence line 300 isvertically disposed on the drain-source voltage axis at about 3.5V, thevoltage value on the drain-source voltage axis can be changed accordingto the actual application requirements of the first semiconductor 10.

As shown in FIG. 2, the semiconductor intelligence line 300 is cutvertically through six different gate-source voltage lines. In practicalapplications, the semiconductor intelligence line 300 can also cutthrough only one gate-source voltage line vertically, but it is notlimited to this.

As shown in FIG. 3, which is the second embodiment of the method forusing a semiconductor intelligence line of the present invention. Thefirst semiconductor 10 in FIG. 1 is an example of IRGP4266DPbF (IGBT),and a semiconductor intelligence line 300 is disposed on an outputcharacteristics table of IRGP4266DPbF in FIG. 3.

The semiconductor intelligence line 300 is disposed vertically on thecollector-emitter voltage (VCE) axis, about a position at 3.5V.

The gate-emitter voltage (VGE) lines crossed by the semiconductorintelligence line 300 are 8V, 10V, 12V and 15V respectively, and thecorresponding parallel and transverse Collector Current (IC) values are5 A, 55 A, 140 A and 240 A. For example, when VGE=15V and ICE=240 A, itsVCE is 3.5V.

When VGE=12V and ICE=140 A, its VCE is 3.5V.

When VGE=10V and ICE=55 A, its VCE is 3.5V.

When VGE=8V and ICE=5 A, its VCE is 3.5V.

From the above, the semiconductor intelligence line 300 can use fourdifferent gate-emitter voltages at the 3.5V position on thecollector-emitter voltage axis, that is, VGE=15V, 12V, 10V and 8V canget the corresponding collector-emitter current IC=240 A, 140 A, 50 Aand 5 A.

The corresponding collector current IC=240 A, 140 A, 50 A and 5 A arethe collector current values of the application limit. In application,if the collector current value exceeds the application limit, thecircuit is open by the collector and the emitter of the firstsemiconductor 10, so that the function of indicating the collector andthe emitter of the first semiconductor 10 to open circuit is achieved.

From the above, although the semiconductor intelligence line 300 isvertically disposed on the collector-emitter voltage axis at about 3.5V,the voltage value on the collector-emitter voltage axis can be changedaccording to the actual application requirements of the firstsemiconductor 10.

As shown in FIG. 3, the semiconductor intelligence line 300 is cutvertically through four different gate-emitter voltage lines. Inpractical applications, the semiconductor intelligence line 300 can alsocut through only one gate-emitter voltage line vertically, but it is notlimited to this.

As shown in FIG. 4, which is the third embodiment of the method forusing a semiconductor intelligence line of the present invention. Thefirst semiconductor 10 in FIG. 1 is an example of 2SD880 (NPN SiliconTransistor), and a semiconductor intelligence line 300 is disposed on anoutput characteristics table of 2SD880 in FIG. 4.

The semiconductor intelligence line 300 is disposed vertically on thecollector-emitter voltage (VCE) axis, about a position at 1.7V.

The base current (IB) lines crossed by the semiconductor intelligenceline 300 are 10 mA, 20 mA, 30 mA, 50 mA and 60 mA respectively, and thecorresponding parallel and transverse Collector Current (IC) values are1 A, 1.3 A, 1.5 A, 1.7 A and 2.3 A. For example, when IB=60 mA andIC=2.3 A, its VCE is 1.7V.

When IB=50 mA and IC=1.7 A, its VCE is 1.7V.

When IB=30 mA and IC=1.5 A, its VCE is 1.7V.

When IB=20 mA and IC=1.3 A, its VCE is 1.7V.

When IB=10 mA and IC=1 A, its VCE is 1.7V.

From the above, the semiconductor intelligence line 300 can use fivedifferent base current (IB) at the 1.7V position on thecollector-emitter voltage (VCE) axis, that is, IB=60 mA, 50 mA, 30 mA,20 mA and 10 mA can get the corresponding collector current IC=2.3 A,1.7 A, 1.5 A, 1.3 A and 1 A.

The corresponding collector current IC=2.3 A, 1.7 A, 1.5 A, 1.3 A and 1A are the collector current values of the application limit. Inapplication, if the collector current value exceeds the applicationlimit, the circuit is open by the collector and the emitter of the firstsemiconductor 10, so that the function of indicating the collector andthe emitter of the first semiconductor 10 to open circuit is achieved.

From the above, although the semiconductor intelligence line 300 isvertically disposed on the collector-emitter voltage axis at about 1.7V,the voltage value on the collector-emitter voltage axis can be changedaccording to the actual application requirements of the firstsemiconductor 10.

As shown in FIG. 4, the semiconductor intelligence line 300 is cutvertically through five different base current lines. In practicalapplications, the semiconductor intelligence line 300 can also cutthrough only one base current line vertically, but it is not limited tothis.

It can be seen from the above description that the semiconductorintelligence line 300 of the present invention can be implementedaccordingly.

What is claimed is:
 1. A method for using a semiconductor intelligenceline, which indicates a drain and a source of a first semiconductor toopen circuit when a drain current value exceeds the semiconductorintelligence line under a setting of a gate-source voltage, the methodcomprising: disposing the semiconductor intelligence line vertically ona drain-source voltage axis of an output characteristics table of thefirst semiconductor; cutting through at least one gate-source voltageline on the output characteristics table of the first semiconductorvertically by the semiconductor intelligence line; and crossing thesemiconductor intelligence line and the gate-source voltage line toobtain a crossing point, which extends horizontally and crosses with adrain current axis of the output characteristics table of the firstsemiconductor.
 2. The method of claim 1, wherein the drain current valueof the drain current axis indicates an application limit of the draincurrent.
 3. The method of claim 1, wherein the first semiconductor is an-channel metal oxide semiconductor field effect transistor.
 4. Themethod of claim 1, wherein the output characteristics table of the firstsemiconductor has at least one of the semiconductor intelligence line.5. A method for using a semiconductor intelligence line, which indicatesa collector and an emitter of a first semiconductor to open circuit whena collector current value exceeds the semiconductor intelligence lineunder a setting of a gate-emitter voltage, the method comprising:disposing the semiconductor intelligence line vertically on acollector-emitter voltage axis of an output characteristics table of thefirst semiconductor; cutting through at least one gate-emitter voltageline on the output characteristics table of the first semiconductorvertically by the semiconductor intelligence line; and crossing thesemiconductor intelligence line and the gate-emitter voltage line toobtain a crossing point, which extends horizontally and crosses with acollector current axis of the output characteristics table of the firstsemiconductor.
 6. The method of claim 5, wherein the collector currentvalue of the collector current axis indicates an application limit ofthe collector current.
 7. The method of claim 5, wherein the firstsemiconductor is an insulated gate bipolar transistor.
 8. The method ofclaim 5, wherein the output characteristics table of the firstsemiconductor has at least one of the semiconductor intelligence line.9. A method for using a semiconductor intelligence line, indicates acollector and an emitter of a first semiconductor to open circuit when acollector current value exceeds the semiconductor intelligence lineunder a setting of a base current, the method comprising: disposing thesemiconductor intelligence line vertically on a collector-emittervoltage axis of an output characteristics table of the firstsemiconductor; cutting through at least one base current line on theoutput characteristics table of the first semiconductor vertically bythe semiconductor intelligence line; and crossing the semiconductorintelligence line and the base current line to obtain a crossing point,which extends horizontally and crosses with a collector current axis ofthe output characteristics table of the first semiconductor.
 10. Themethod of claim 9, wherein the collector current value of the collectorcurrent axis indicates the application limit of the collector current.11. The method of claim 9, wherein the first semiconductor is an n-typetransistor.
 12. The method of claim 9, wherein the outputcharacteristics table of the first semiconductor has at least one of thesemiconductor intelligence line.